Infrared sensor design using an epoxy film as an infrared absorption layer

ABSTRACT

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. Nonprovisional patentapplication Ser. No. 13/411,849, filed Mar. 5, 2012 which claims thebenefit of priority under U.S.C. § 119(e) of U.S. ProvisionalApplication 61/449,296 (filed Mar. 4, 2011) the contents of both ofwhich are hereby incorporated by reference.

The following co-pending patent applications are related and herebyincorporated by reference:

U.S. patent application Ser. No. 13/411,861 (filed Mar. 5, 2012)entitled “CAVITY PROCESS ETCH UNDERCUT MONITOR,”

U.S. patent application Ser. No. 13/411,871 (filed Mar. 5, 2012)entitled “CAVITY OPEN PROCESS TO IMPROVE UNDERCUT,”

U.S. patent application Ser. No. 13/412,562 (filed Mar. 5, 2012)entitled “BACKGROUND PROCESS FOR INTEGRATED CIRCUIT WAFERS,” and

U.S. patent application Ser. No. 13/412,563 (filed Mar. 5, 2012)entitled “SENSOR COVER FOR INTEGRATED SENSOR CHIPS.”

FIELD OF THE INVENTION

This invention relates to the field of microelectronic mechanicalsystems (MEMS) devices. More particularly, this invention relates tothree-dimensional structures in MEMS devices.

BACKGROUND OF THE INVENTION

A microelectronic mechanical system (MEMS) infrared (IR) sensor may havea cavity in a substrate underlapping an overlying layer. A temperaturesensing component may be disposed in the overlying layer over thecavity, so that the cavity provides thermal isolation between thetemperature sensing component and the substrate. It may be desirable toprevent foreign material from entering the cavity, for example throughan access hole in the overlying layer, during fabrication steps of theIR sensor subsequent to forming the cavity.

SUMMARY OF THE INVENTION

The following presents a simplified summary in order to provide a basicunderstanding of one or more aspects of the invention. This summary isnot an extensive overview of the invention, and is neither intended toidentify key or critical elements of the invention, nor to delineate thescope thereof. Rather, the primary purpose of the summary is to presentsome concepts of the invention in a simplified form as a prelude to amore detailed description that is presented later.

A MEMS IR sensor, with a cavity in a substrate underlapping an overlyinglayer and a temperature sensing component disposed in the overlyinglayer over the cavity, may be formed by forming an IR-absorbing sealinglayer on the overlying layer so as to cover access holes to the cavity.The sealing layer is subsequently patterned using a photolithographicprocess and possibly an etch process to form an IR-absorbing seal whichprevents foreign material from entering the cavity.

DESCRIPTION OF THE VIEWS OF THE DRAWING

FIG. 1 is a cross section of a MEMS IR sensor formed according to anembodiment.

FIG. 2A through FIG. 2I are cross sections of the MEMS IR sensor asdescribed in reference to FIG. 1, depicted in successive stages offabrication.

FIG. 3A through FIG. 3G are cross sections of a MEMS IR sensor formedaccording to another embodiment, depicted in successive stages offabrication.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

The present invention is described with reference to the attachedfigures. The figures are not drawn to scale and they are provided merelyto illustrate the invention. Several aspects of the invention aredescribed below with reference to example applications for illustration.It should be understood that numerous specific details, relationships,and methods are set forth to provide an understanding of the invention.One skilled in the relevant art, however, will readily recognize thatthe invention can be practiced without one or more of the specificdetails or with other methods. In other instances, well-known structuresor operations are not shown in detail to avoid obscuring the invention.The present invention is not limited by the illustrated ordering of actsor events, as some acts may occur in different orders and/orconcurrently with other acts or events. Furthermore, not all illustratedacts or events are required to implement a methodology in accordancewith the present invention.

A MEMS IR sensor, with a cavity in a substrate underlapping an overlyinglayer and a temperature sensing component disposed in the overlyinglayer over the cavity, may be formed by forming an IR-absorbing sealinglayer on the overlying layer so as to cover access holes to the cavity.The sealing layer is subsequently patterned using a photolithographicprocess and possibly an etch process to form an IR-absorbing seal whichprevents foreign material from entering the cavity. The MEMS IR sensormay have an optional second temperature sensing component disposed inthe overlying layer over the substrate adjacent to the cavity, andconfigured in a differential mode with the temperature sensing componentdisposed over the cavity, so that a sensor circuit in the MEMS IR sensormeasures a temperature difference between the two temperature sensingcomponents. The MEMS IR sensor may be used to detect a hot objectemitting IR energy. The temperature sensing component disposed over thecavity has a higher thermal impedance to the substrate than the secondtemperature sensing component disposed over the substrate adjacent tothe cavity. Disposing the IR-absorbing seal over the temperature sensingcomponent provides that more IR energy from the hot object will betransferred to the temperature sensing component than to the secondtemperature sensing component. The combination of more IR energytransferred to the temperature sensing component and the higher thermalimpedance to substrate for the temperature sensing component provides ahigher temperature at the temperature sensing component than at thesecond temperature sensing component. Thus, the sensor circuit willmeasure a temperature difference related to the IR energy from theremote source.

For the purposes of this description, the term “substantially” isunderstood to mean within fabrication tolerances and irrespective ofvariations encountered during fabrication of embodiments.

FIG. 1 is a cross section of a MEMS IR sensor formed according to anembodiment. The MEMS IR sensor 100 is formed in and on a substrate 102.An overlying dielectric layer 104 is formed over the substrate 102. Theoverlying dielectric layer 104 may include, for example, silicon dioxideand possibly silicon nitride or silicon oxynitride. Access holes 106 areformed through the overlying dielectric layer 104. The access holes 106may have diameters of 10 to 25 microns. A cavity 108 is formed in thesubstrate 102 below the access holes 106. A temperature sensingcomponent 110 is disposed in or on the overlying dielectric layer 104over the cavity 108. The temperature sensing component 110 may includeSeebeck junctions, thermocouple junctions, ferroelectric capacitors,thermistors, or other temperature sensing elements. Metal interconnectsmay be disposed in and/or on the overlying dielectric layer 104 toelectrically connect the temperature sensing component 110 withcircuitry outside the cavity 108.

An IR-absorbing seal 112 is formed over the overlying dielectric layer104 so as to cover the access holes 106. The IR-absorbing seal 112 maybe, for example, 10 to 20 microns thick, and absorbs at least 50 percentof infrared energy incident on the IR-absorbing seal 112 in a wavelengthband of 8 to 10 microns. The IR-absorbing seal 112 includes organicpolymer material, for example epoxy, which is resistant to strongsolvents and oxidizing chemicals used in subsequent processing steps,such as plating mask removal and plating seed layer removal, andpossibly filler material with high IR absorbing properties, such ascarbon particles. The IR-absorbing seal 112 may possibly not extend tolateral edges of the cavity 108, may possibly be approximatelycoincident with the lateral edges of the cavity 108 as depicted in FIG.1, or may possibly extend past the lateral edges of the cavity 108.

The overlying dielectric layer 104 may also contain an input/output(I/O) pad 114. A plated I/O bump 116 which includes a bump seed layer118, a plated copper bump 120 and a plated metal cap layer 122 is formedon the I/O pad 114. The plated I/O bump 116 may be formed after theIR-absorbing seal 112 is formed.

Forming the IR-absorbing seal 112 so as to cover the access holes 106may advantageously prevent foreign material from entering the cavity 108during subsequent process steps such as singulation, in which adjacentinstances of the MEMS IR sensor 100 are separated, commonly by sawing inthe presence of a water stream. Forming the IR-absorbing seal 112 toabsorb at least 50 percent of infrared energy incident on theIR-absorbing seal 112 in a wavelength band of 8 to 10 microns mayadvantageously improve a sensitivity of the MEMS IR sensor 100 to adesired value. Forming the IR-absorbing seal 112 to include organicpolymer material which is resistant to solvents used in subsequentprocessing steps may advantageously improve a fabrication yield of theMEMS IR sensor 100.

The MEMS IR sensor 100 may include an optional second temperaturesensing component 124 disposed over the substrate 102 adjacent to thecavity 108, so that the first temperature sensing component 110 has alarger thermal impedance to the substrate 102 than the secondtemperature sensing component 124. More IR energy from a remote sourcesuch as a hot object may be absorbed by the IR-absorbing seal 112 thanby materials proximate to the second temperature sensing component 124,so that the first temperature sensing component 110 may have a highertemperature than the second temperature sensing component 124. A sensorcircuit connected in a differential mode to the first temperaturesensing component 110 and the second temperature sensing component 124will measure a temperature difference related to an amplitude of the IRenergy from the remote source.

FIG. 2A through FIG. 2I are cross sections of the MEMS IR sensor asdescribed in reference to FIG. 1, depicted in successive stages offabrication. Referring to FIG. 2A, the MEMS IR sensor 100 is formed inand on the substrate 102, which may be, for example, a silicon wafer.Electrical components of the MEMS IR sensor 100 such as transistors maybe formed in and on the substrate 102. The overlying dielectric layer104 is formed over the substrate 102, possibly covering the entire topsurface of the substrate 102. The overlying dielectric layer 104 mayinclude 3 to 10 microns of silicon dioxide formed by thermal oxidationof the substrate 102, decomposition of tetraethyl orthosilicate, alsoknown as tetraethoxysilane or TEOS, and/or densification ofmethylsilsesquioxane (MSQ). The overlying dielectric layer 104 may alsoinclude one or more layers of silicon nitride and/or silicon oxynitride,500 nanometers to 2 microns thick, formed by plasma-enhanced chemicalvapor deposition (PECVD) at a top surface of the overlying dielectriclayer 104 to provide, for example, a barrier to undesired contaminants.

During formation of the overlying dielectric layer 104, the temperaturesensing component 110 is formed in or on the overlying dielectric layer104. Additionally, metal interconnect lines may be formed in theoverlying dielectric layer 104, for example to connect the temperaturesensing component 110 to circuitry in the MEMS IR sensor 100. Theoptional I/O pad 114 may be formed during formation of the overlyingdielectric layer 104.

The access holes 106 are formed through the overlying dielectric layer104 proximate to the temperature sensing component 110, for example byforming an access hole etch mask over the overlying dielectric layer 104and performing an access hole etch process which removes material fromthe overlying dielectric layer 104 so as to expose the substrate 102.The access hole etch process may include one or more reactive ion etch(RIE) steps which provide fluorine ions and other reactants into theaccess holes 106. If the optional I/O pad 114 is present, an I/O opening126 which exposes the I/O pad 114 may be formed concurrently with theaccess holes 106.

The cavity 108 is formed in the substrate 102 by a cavity etch processperformed after the access holes 106 are formed. The cavity etch processmay be formed using a process sequence of forming a cavity etch maskover the overlying dielectric layer 104 which exposes the substrate 102in the access holes 106 and exposing the MEMS IR sensor 100 to anisotropic ambient containing etchant species such as halogen radicals.The access hole etch mask may possibly be used for the cavity etch mask.The cavity 108 underlaps the access holes 106 by at least 5 microns.

Referring to FIG. 2B, an IR-absorbing sealing layer 128 is formed overthe overlying dielectric layer 104, covering the access holes 106. TheIR-absorbing sealing layer 128 may possibly protrude into the accessholes 106 as depicted in FIG. 2B, but does not extend into the cavity108. The IR-absorbing sealing layer 128 may be 10 to 20 microns thick.The IR-absorbing sealing layer 128 includes adhesive material, IRabsorbing material and photosensitive material. One component of theIR-absorbing sealing layer 128, for example epoxy, may provide theadhesive material and the IR absorbing material. The IR-absorbingsealing layer 128 may be have homogenous structure so that the adhesivematerial, IR absorbing material and photosensitive material aresubstantially uniformly distributed in the IR-absorbing sealing layer128. The IR-absorbing sealing layer 128 absorbs at least 50 percent ofinfrared energy incident on the IR-absorbing sealing layer 128 in awavelength band of 8 to 10 microns. The IR-absorbing sealing layer 128may be formed over the overlying dielectric layer 104 by providing theIR-absorbing sealing layer 128 as a laminate between sheets of releasefilm, removing a first release film from a bottom surface of theIR-absorbing sealing layer 128, applying the IR-absorbing sealing layer128 to the overlying dielectric layer 104 so that the bottom surface ofthe IR-absorbing sealing layer 128 adheres to the overlying dielectriclayer 104 and removing a second release film from a top surface of theIR-absorbing sealing layer 128. An example of the IR-absorbing sealinglayer 128 provided in such a laminate form is the TMMF S2000 series ofPermanent Photoresist products from Tokyo Ohka Kogyo Co., Ltd. Othermethods of forming the IR-absorbing sealing layer 128 are within thescope of the instant embodiment.

Referring to FIG. 2C, a lithographic exposure operation is performed inwhich ultraviolet light is provided through a photomask 130 so as toexpose a portion 132 of the IR-absorbing sealing layer 128 in an areadefined for the IR-absorbing seal 112 of FIG. 1. An exposure dose maybe, for example, 100 to 200 millijoules/cm². Exposing the portion 132 ofthe IR-absorbing sealing layer 128 activates the photosensitive materialin the IR-absorbing sealing layer 128 so as to cause the portion 132 tobe less soluble in a subsequent develop operation than unexposed areasof the IR-absorbing sealing layer 128. After exposing the IR-absorbingsealing layer 128 to the ultraviolet light, the IR-absorbing sealinglayer 128 may be baked, for example at 90° C. for 5 minutes, to removebyproducts of the exposure process from the IR-absorbing sealing layer128.

Referring to FIG. 2D, a develop operation is performed which provides adeveloper fluid, such as propylene glycol monomethyl ether acetate, alsoreferred to as PM Thinner, to the IR-absorbing sealing layer 128. Thedevelop operation may provide the PM Thinner to the IR-absorbing sealinglayer 128, for example, at room temperature for 60 to 90 minutes. Thedevelop operation dissolves unexposed material in the IR-absorbingsealing layer 128 in the developer fluid so as to leave the IR-absorbingseal 112.

After formation of the IR-absorbing seal 112, the plated I/O bump 116 ofFIG. 1 may be formed on the I/O pad 114, if present, in the I/O opening126. FIG. 2E through FIG. 2I are cross sections of the MEMS IR sensor100 depicting successive stages of forming the plated I/O bump 116.Referring to FIG. 2E, a metal seed layer 134 is formed over the MEMS IRsensor 100, so as to make electrical connection to the I/O pad 114through the I/O opening 126. The seed layer 134 may include, forexample, a sputtered adhesion layer of titanium tungsten which contactsthe I/O pad 114 and a sputtered plating seed layer of copper on theadhesion layer. The seed layer 134 covers the IR-absorbing seal 112 andany exposed overlying dielectric layer 104.

Referring to FIG. 2F, a plating mask 136 is formed over the seed layer134 so as to expose the seed layer 134 in the I/O opening 126. Theplating mask 136 may include 5 to 20 microns of photoresist and beformed by a photolithographic operation. The plating mask 136 covers theIR-absorbing seal 112 and any exposed overlying dielectric layer 104.

Referring to FIG. 2G, an electroplating operation is performed whichforms the plated copper bump 120 and the plated metal cap layer 122 onthe seed layer 134 in the I/O opening 126. Metal does not plate on theseed layer 134 in areas covered by the plating mask 136. A thickness ofthe plated copper bump 120 may be, for example, within 1 to 2 microns ofthe thickness of the plating mask 136. The plated metal cap layer 122may include, for example, a layer of electroplated nickel 1 to 2 micronsthick on the plated copper bump 120 and a plated palladium layer 100 to500 nanometers thick on the plated nickel layer.

Referring to FIG. 2H, a plating mask strip operation is performed whichremoves the plating mask 136 from the MEMS IR sensor 100. The accessholes 106 remain covered by the IR-absorbing seal 112 during the platingmask strip operation. The plating mask strip operation may dissolve theplating mask 136 in a strong solvent, for example N-methylpyrrolidinone,commonly referred to as NMP, at 95° C. Forming the IR-absorbing seal 112of materials which are resistant to solvents may advantageously reducedeformation or peeling of the IR-absorbing seal 112 during the platingmask strip operation.

Referring to FIG. 2I, a seed layer strip operation is performed whichremoves the seed layer 134 from the MEMS IR sensor 100 outside of theplated I/O bump 116 to leave the bump seed layer 118 under the platedcopper bump 120. The seed layer strip operation may include exposing theMEMS IR sensor 100 to strong oxidizing chemicals, for example 30 percenthydrogen peroxide at 100° C. The access holes 106 remain covered by theIR-absorbing seal 112 during the seed layer strip operation. Forming theIR-absorbing seal 112 of materials which are resistant to oxidizingchemicals may advantageously reduce deformation or peeling of theIR-absorbing seal 112 during the plating mask strip operation.

FIG. 3A through FIG. 3G are cross sections of a MEMS IR sensor formedaccording to another embodiment, depicted in successive stages offabrication. Referring to FIG. 3A, the MEMS IR sensor 300 is formed inand on a substrate 302, and an overlying dielectric layer 304 is formedover the substrate 302, as described in reference to FIG. 2A. Theoverlying dielectric layer 304 contains a temperature sensing component310 and possibly an I/O pad 314 as described in reference to FIG. 2A.Access holes 306 are formed through the overlying dielectric layer 304proximate to the temperature sensing component 310 and a cavity 308 isformed in the substrate 302 under the access holes 306, as described inreference to FIG. 2A.

An IR-absorbing sealing layer 326 is formed over the overlyingdielectric layer 304, covering the access holes 306. The IR-absorbingsealing layer 326 has a layered structure and includes an adhesivematerial 336 such as epoxy contacting the overlying dielectric layer304, an IR absorbing material 338 such as carbon particle impregnatedepoxy, and possibly an optional overcoat layer 340 such as epoxy orpolyimide at a top surface of the IR-absorbing sealing layer 326. The IRabsorbing material 338 absorbs at least 50 percent of infrared energyincident on the IR-absorbing sealing layer 326 in a wavelength band of 8to 10 microns. The IR-absorbing sealing layer 326 may be applied to theoverlying dielectric layer 304, for example, as described in referenceto FIG. 2B. The IR-absorbing sealing layer 326 is resistant to strongsolvents and oxidizing chemicals.

Referring to FIG. 3B, a seal etch mask 342 is formed over theIR-absorbing sealing layer 326 so as to cover an area defined for anIR-absorbing seal. The seal etch mask 342 may include photoresist and beformed by a photolithographic operation. The seal etch mask 342 may alsoinclude a hard mask layer, for example, silicon dioxide or siliconnitride. Forming the optional overcoat layer 340 at the top surface ofthe IR-absorbing sealing layer 326 may advantageously reduce deformationof the IR-absorbing sealing layer 326 during a develop step of thephotolithographic operation that forms the seal etch mask 342.

Referring to FIG. 3C, a seal etch process is performed which removesmaterial from the IR-absorbing sealing layer 326 exposed by the sealetch mask 342 so as to form an IR-absorbing seal 312. The seal etchprocess may include an oxygen RIE step to remove organic material in theIR-absorbing sealing layer 326. The IR-absorbing seal 312 covers theaccess holes 306 as described in reference to FIG. 1.

Referring to FIG. 3D, a seal mask strip process is performed whichremoves the seal etch mask 342 such that the IR-absorbing seal 312continues to cover the access holes 306. The seal mask strip process mayinclude solvents to dissolve the photoresist, if present, and an RIEstep to remove the hard mask, if present, in the seal etch mask 342.

After formation of the IR-absorbing seal 312, a plated I/O bump may beformed on the I/O pad 314, if present, for example using the processsequence described in reference to FIG. 2E through FIG. 2I. FIG. 3Ethrough FIG. 3G are cross sections of the MEMS IR sensor 300 depictingsuccessive stages of forming the plated I/O bump. Referring to FIG. 3E,an I/O opening 344 is formed in the overlying dielectric layer 304 so asto expose the I/O pad 314. The I/O opening 344 may be formed, forexample by forming an I/O etch mask over the MEMS IR sensor 300 whichexposes an area over the I/O pad 314, performing an I/O opening etchprocess including an RIE step which removes material from the overlyingdielectric layer 304 over the I/O pad 314 and subsequently removing theI/O etch mask by dissolving the I/O etch mask in solvent.

Referring to FIG. 3F, a metal seed layer 332 is formed over the MEMS IRsensor 300, so as to make electrical connection to the I/O pad 314through the I/O opening 344, as described in reference to FIG. 2E. Aplating mask 334 is formed over the seed layer 332 so as to expose theseed layer 332 in the I/O opening 344 as described in reference to FIG.2F. An electroplating operation is performed which forms a plated copperbump 320 and a plated metal cap layer 322 on the seed layer 332 in theI/O opening 344, as described in reference to FIG. 2G.

Referring to FIG. 3G, a plating mask strip operation is performed whichremoves the plating mask 334 from the MEMS IR sensor 300 as described inreference to FIG. 2H. Forming the IR-absorbing seal 312 of materialswhich are resistant to solvents may advantageously reduce deformation orpeeling of the IR-absorbing seal 312 during the plating mask stripoperation. Subsequently, a seed layer strip operation is performed whichremoves the seed layer 332 from the MEMS IR sensor 300 outside of theplated I/O bump 316, to leave a bump seed layer 318 under the platedcopper bump 320 as described in reference to FIG. 2I. Forming theIR-absorbing seal 312 of materials which are resistant to oxidizingchemicals may advantageously reduce deformation or peeling of theIR-absorbing seal 312 during the plating mask strip operation.

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only and not limitation. Numerous changes to the disclosedembodiments can be made in accordance with the disclosure herein withoutdeparting from the spirit or scope of the invention. Thus, the breadthand scope of the present invention should not be limited by any of theabove described embodiments. Rather, the scope of the invention shouldbe defined in accordance with the following claims and theirequivalents.

What is claimed is:
 1. A microelectronic mechanical system (MEMS)infrared (IR) sensor, comprising: a substrate; an overlying dielectriclayer disposed over said substrate, with access holes through saidoverlying dielectric layer; a cavity in said substrate under said accessholes; a first temperature sensing component disposed over said cavity;and an IR-absorbing seal disposed over said overlying dielectric layerso as to cover said access holes without extending into said cavity,said IR-absorbing seal including: an adhesive material contacting theoverlying dielectric material; an IR-absorbing material on the adhesivematerial; and an overcoat layer over the IR-absorbing material; andwherein the IR-absorbing seal does not extend past the lateral edges ofthe cavity.
 2. The MEMS IR sensor of claim 1, further including a platedinput/output (I/O) bump, said plated I/O bump including: a bump seedlayer making electrical connection to an I/O pad disposed in saidoverlying dielectric layer through an I/O opening in said overlyingdielectric layer; a plated copper bump disposed on said bump seed layer;and a plated metal cap layer disposed on said plated copper bump.
 3. TheMEMS IR sensor of claim 1, wherein the IR-absorbing material is adaptedto absorb at least 50 percent of infrared energy incident on saidIR-absorbing seal in a wavelength band of 8 to 10 microns.
 4. The MEMSIR sensor of claim 1, wherein the adhesive material comprises an epoxy.5. The MEMS IR sensor of claim 1, wherein the IR absorbing material is acarbon particle impregnated epoxy.
 6. The MEMS IR sensor of claim 1,wherein the overcoat layer comprises polymide.
 7. The MEMS IR sensor ofclaim 1, wherein the overcoat layer comprises an epoxy.
 8. Amicroelectronic mechanical system (MEMS) infrared (IR) sensor,comprising: a substrate; an overlying dielectric layer disposed oversaid substrate, with access holes through said overlying dielectriclayer; a cavity in said substrate under said access holes; a firsttemperature sensing component disposed over said cavity a secondtemperature sensing component disposed over a portion of the substratenot including the cavity; and an IR-absorbing seal disposed over saidoverlying dielectric layer so as to cover said access holes withoutextending into said cavity, wherein the IR-absorbing seal is locatedover the first temperature sensing component and not over the secondtemperature sensing component, the IR-absorbing seal comprising: anadhesive material contacting the overlying dielectric material; anIR-absorbing material on the adhesive material; an overcoat layer overthe IR-absorbing material; and wherein the IR-absorbing seal does notextend past the lateral edges of the cavity.
 9. The MEMS IR sensor ofclaim 8, wherein the substrate is silicon.
 10. The MEMS IR sensor ofclaim 9, wherein the IR absorbing material is a carbon particleimpregnated epoxy.
 11. The MEMS IR sensor of claim 10, wherein theadhesive material comprises an epoxy.
 12. The MEMS IR sensor of claim11, wherein the overcoat layer comprises an epoxy.
 13. The MEMS IRsensor of claim 11, wherein the overcoat layer comprises polyimide. 14.The MEMS IR sensor of claim 8, further including a plated input/output(I/O) bump, said plated IO bump including: a bump seed layer makingelectrical connection to an I/O pad disposed in said overlyingdielectric layer through an I/O opening in said overlying dielectriclayer; a plated copper bump disposed on said bump seed layer; and aplated metal cap layer disposed on said plated copper bump.
 15. The MEMSIR sensor of claim 8, wherein the IR-absorbing material is adapted toabsorb at least 50 percent of infrared energy incident on saidIR-absorbing seal in a wavelength band of 8 to 10 microns.
 16. The MEMSIR sensor of claim 8, wherein the temperature sensing component includesSeebeck junctions.